Nickel Compound and Alloy Contacts to Nanoscale Si, Ge, and InGaAs Channels

R. Chen; B.-M. Nguyen; W. Tang; S.A. Dayeh

doi:https://doi.org/10.7567/SSDM.2014.F-4-1

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[F-4-1] Nickel Compound and Alloy Contacts to Nanoscale Si, Ge, and InGaAs Channels

R. Chen¹、B.-M. Nguyen^1,2、W. Tang^2,3、S.A. Dayeh¹ (1.Univ. of California San Diego、2.Los Alamos National Laboratory、3.Univ. of California Los Angeles (USA))

https://doi.org/10.7567/SSDM.2014.F-4-1

▲