The Japan Society of Applied Physics

[F-4-2] NiPt Silicide Agglomeration Caused by Stress Relaxation along <010> Direction in NiSi Grain

M. Mizuo1, T. Yamaguchi2, X. Pages3, K. Vanormelingen3, M. Smits3, E. Granneman3, M. Fujisawa2, N. Hattori1 (1.Renesas Semiconductor Manufacturing Co., Ltd., 2.Renesas Electronics Corp., 3.Levitech BV (Japan))

https://doi.org/10.7567/SSDM.2014.F-4-2