NiPt Silicide Agglomeration Caused by Stress Relaxation along &lt;010&gt; Direction in NiSi Grain

M. Mizuo; T. Yamaguchi; X. Pages; K. Vanormelingen; M. Smits; E. Granneman; M. Fujisawa; N. Hattori

doi:https://doi.org/10.7567/SSDM.2014.F-4-2

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[F-4-2] NiPt Silicide Agglomeration Caused by Stress Relaxation along <010> Direction in NiSi Grain

M. Mizuo¹、T. Yamaguchi²、X. Pages³、K. Vanormelingen³、M. Smits³、E. Granneman³、M. Fujisawa²、N. Hattori¹ (1.Renesas Semiconductor Manufacturing Co., Ltd.、2.Renesas Electronics Corp.、3.Levitech BV (Japan))

https://doi.org/10.7567/SSDM.2014.F-4-2

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