[F-7-2] Impact of YScO₃ on Ge Gate Stack in Terms of EOT Reduction as Well as Interface

C. Lu^1,2、C.H. Lee^1,2、T. Nishimura^1,2、K. Nagashio^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo、2.JST-CREST (Japan))

https://doi.org/10.7567/SSDM.2014.F-7-2