[F-7-3] Origin of Self-limiting Oxidation of Ge in High-Pressure O2 at Low Temperature C.H. Lee1,2, T. Nishimura1,2, K. Nagashio1,2, A. Toriumi1,2 (1.Univ. of Tokyo, 2.JST-CREST (Japan)) https://doi.org/10.7567/SSDM.2014.F-7-3