[F-7-3] Origin of Self-limiting Oxidation of Ge in High-Pressure O2 at Low Temperature C.H. Lee1,2、T. Nishimura1,2、K. Nagashio1,2、A. Toriumi1,2 (1.Univ. of Tokyo、2.JST-CREST (Japan)) https://doi.org/10.7567/SSDM.2014.F-7-3