[F-7-4] Very Low EOT in Ge MOS Devices with High Oxidation State Interfacial Layer

C.H. Lin¹, K.S. Chang-Liao¹, C.C. Li¹, L.J. Liu¹, T.M. Lee¹ (1.National Tsing Hua Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2014.F-7-4