[F-7-4] Very Low EOT in Ge MOS Devices with High Oxidation State Interfacial Layer

C.H. Lin¹、K.S. Chang-Liao¹、C.C. Li¹、L.J. Liu¹、T.M. Lee¹ (1.National Tsing Hua Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2014.F-7-4