[G-2-3] Dominant Factors of Stress-Induced Migration in Electroplated Copper Thin Films Used for Through Silicon Via (TSV) Interconnections K. Suzuki1、R. Furuya1、H. Miura1 (1.Tohoku Univ. (Japan)) https://doi.org/10.7567/SSDM.2014.G-2-3