[G-4-2] Hole Trap Associated with High Background Doping in P-type GaAsN Grown by Chemical Beam Epitaxy

O. Elleuch¹、L. Wang¹、K. Demizu¹、K. Ikeda¹、N. Kojima¹、Y. Ohshita¹、M. Yamaguchi¹ (1.Toyota Tech. Inst. (Japan))

https://doi.org/10.7567/SSDM.2014.G-4-2