[G-4-2] Hole Trap Associated with High Background Doping in P-type GaAsN Grown by Chemical Beam Epitaxy
O. Elleuch1, L. Wang1, K. Demizu1, K. Ikeda1, N. Kojima1, Y. Ohshita1, M. Yamaguchi1
(1.Toyota Tech. Inst. (Japan))
https://doi.org/10.7567/SSDM.2014.G-4-2
