Exfoliated-graphene/MoS<sub>2</sub>/metal Vertical Field Effect Transistor with Large Current Modulation and On Current Density

R. Moriya; T. Yamaguchi; Y. Inoue; Y. Sata; N. Yabuki; S. Morikawa; S. Masubuchi; T. Machida

doi:https://doi.org/10.7567/SSDM.2014.H-1-3

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[H-1-3] Exfoliated-graphene/MoS₂/metal Vertical Field Effect Transistor with Large Current Modulation and On Current Density

R. Moriya¹, T. Yamaguchi¹, Y. Inoue¹, Y. Sata¹, N. Yabuki¹, S. Morikawa¹, S. Masubuchi^1,2, T. Machida^1,2 (1.IIS, Univ. of Tokyo, 2.INQIE, Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2014.H-1-3

▲

2014 International Conference on Solid State Devices and Materials

[H-1-3] Exfoliated-graphene/MoS2/metal Vertical Field Effect Transistor with Large Current Modulation and On Current Density

[H-1-3] Exfoliated-graphene/MoS₂/metal Vertical Field Effect Transistor with Large Current Modulation and On Current Density