Exfoliated-graphene/MoS<sub>2</sub>/metal Vertical Field Effect Transistor with Large Current Modulation and On Current Density

R. Moriya; T. Yamaguchi; Y. Inoue; Y. Sata; N. Yabuki; S. Morikawa; S. Masubuchi; T. Machida

doi:https://doi.org/10.7567/SSDM.2014.H-1-3

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[H-1-3] Exfoliated-graphene/MoS₂/metal Vertical Field Effect Transistor with Large Current Modulation and On Current Density

R. Moriya¹、T. Yamaguchi¹、Y. Inoue¹、Y. Sata¹、N. Yabuki¹、S. Morikawa¹、S. Masubuchi^1,2、T. Machida^1,2 (1.IIS, Univ. of Tokyo、2.INQIE, Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2014.H-1-3

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2014 International Conference on Solid State Devices and Materials

[H-1-3] Exfoliated-graphene/MoS2/metal Vertical Field Effect Transistor with Large Current Modulation and On Current Density

[H-1-3] Exfoliated-graphene/MoS₂/metal Vertical Field Effect Transistor with Large Current Modulation and On Current Density