Impact of Dopant Induced States on Interband Tunneling in Nanoscale pn Junctions

H.N. Tan; S. Purwiyanti; D. Moraru; L.T. Anh; M. Manoharan; T. Mizuno; H. Mizuta; D. Hartanto; M. Tabe

doi:https://doi.org/10.7567/SSDM.2014.H-4-3

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[H-4-3] Impact of Dopant Induced States on Interband Tunneling in Nanoscale pn Junctions

H.N. Tan¹, S. Purwiyanti^1,2, D. Moraru¹, L.T. Anh³, M. Manoharan³, T. Mizuno¹, H. Mizuta^3,4, D. Hartanto², M. Tabe¹ (1.Shizuoka Univ., 2.Univ of Indonesia, 3.JAIST, 4.Univ of Southampton (Japan))

https://doi.org/10.7567/SSDM.2014.H-4-3

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