The Japan Society of Applied Physics

[H-4-3] Impact of Dopant Induced States on Interband Tunneling in Nanoscale pn Junctions

H.N. Tan1, S. Purwiyanti1,2, D. Moraru1, L.T. Anh3, M. Manoharan3, T. Mizuno1, H. Mizuta3,4, D. Hartanto2, M. Tabe1 (1.Shizuoka Univ., 2.Univ of Indonesia, 3.JAIST, 4.Univ of Southampton (Japan))

https://doi.org/10.7567/SSDM.2014.H-4-3