Impact of Dopant Induced States on Interband Tunneling in Nanoscale pn Junctions

H.N. Tan; S. Purwiyanti; D. Moraru; L.T. Anh; M. Manoharan; T. Mizuno; H. Mizuta; D. Hartanto; M. Tabe

doi:https://doi.org/10.7567/SSDM.2014.H-4-3

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[H-4-3] Impact of Dopant Induced States on Interband Tunneling in Nanoscale pn Junctions

H.N. Tan¹、S. Purwiyanti^1,2、D. Moraru¹、L.T. Anh³、M. Manoharan³、T. Mizuno¹、H. Mizuta^3,4、D. Hartanto²、M. Tabe¹ (1.Shizuoka Univ.、2.Univ of Indonesia、3.JAIST、4.Univ of Southampton (Japan))

https://doi.org/10.7567/SSDM.2014.H-4-3

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