[H-4-4] Resistance Switching Behavior of ZnO Resistive RAM (RRAM) with a Reduced Graphene Oxide capping layer

C.L. Lin¹、W.Y. Chang¹、Y.L. Huang¹、T.W. Wang¹、K.Y. Hung¹ (1.Feng Chia Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2014.H-4-4