[H-7-4L] Gate-Controlled Semimetal-Topological Insulator Transition in an InAs/GaSb Heterostructure

K. Suzuki¹、Y. Harada¹、K. Onomitsu¹、K. Muraki¹ (1.NTT Basic Research Labs., NTT Corp. (Japan))

https://doi.org/10.7567/SSDM.2014.H-7-4L