[J-2-5L] Charge Pumping Current from Single Si/SiO₂ Interface Traps: Direct Observation of P_b Centers and Fundamental Trap-Counting by the Charge Pumping Method

T. Tsuchiya¹、Y. Ono² (1.Shimane Univ.、2.Univ. of Toyama (Japan))

https://doi.org/10.7567/SSDM.2014.J-2-5L