[K-8-3] Estimating the Density of Trap States in the Middle of the Bandgap using Ambipolar Organic Field-Effect Transistors

R. Haeusermann¹、S. Chauvin¹、A. Facchetti²、Z. Chen²、B. Batlogg¹ (1.ETH Zurich、2.Polyera Corp. (Switzerland))

https://doi.org/10.7567/SSDM.2014.K-8-3