[N-1-3] Structure of basal plane defects formed by the conversion of threading screw dislocation during solution growth of SiC

S. Harada¹, S.Y. Xiao¹, M. Tagawa¹, Y. Yamamoto¹, S. Arai¹, N. Tanaka¹, T. Ujihara¹ (1.Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2014.N-1-3