[N-1-3] Structure of basal plane defects formed by the conversion of threading screw dislocation during solution growth of SiC

S. Harada¹、S.Y. Xiao¹、M. Tagawa¹、Y. Yamamoto¹、S. Arai¹、N. Tanaka¹、T. Ujihara¹ (1.Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2014.N-1-3