[N-1-5L] α-Ga₂O₃ Schottky barrier diodes fabricated by mist epitaxy technique

M. Oda^1,2, A. Takatsuka¹, T. Hitora¹, J. Kikawa³, K. Kaneko², S. Fujita² (1.FLOSFIA, INC., 2.Kyoto Univ., 3.Ritsumeikan Univ. (Japan))

https://doi.org/10.7567/SSDM.2014.N-1-5L