[N-1-5L] α-Ga₂O₃ Schottky barrier diodes fabricated by mist epitaxy technique

M. Oda^1,2、A. Takatsuka¹、T. Hitora¹、J. Kikawa³、K. Kaneko²、S. Fujita² (1.FLOSFIA, INC.、2.Kyoto Univ.、3.Ritsumeikan Univ. (Japan))

https://doi.org/10.7567/SSDM.2014.N-1-5L