Strain Characterization of InAs Segment in Au-free InP/InAs Heterostructure Nanowires by Micro-Raman Measurement

G. Zhang; K. Suzuki; S. Nakagawa; K. Tateno; T. Sogawa; H. Gotoh

doi:https://doi.org/10.7567/SSDM.2014.P-6-4

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-6-4] Strain Characterization of InAs Segment in Au-free InP/InAs Heterostructure Nanowires by Micro-Raman Measurement

G. Zhang¹、K. Suzuki²、S. Nakagawa³、K. Tateno¹、T. Sogawa¹、H. Gotoh¹ (1.Basic Res. Labs., NTT Corp.、2.Tokyo Denki Univ.、3.Toyohashi Univ. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2014.P-6-4

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