Strain Characterization of InAs Segment in Au-free InP/InAs Heterostructure Nanowires by Micro-Raman Measurement

G. Zhang; K. Suzuki; S. Nakagawa; K. Tateno; T. Sogawa; H. Gotoh

doi:https://doi.org/10.7567/SSDM.2014.P-6-4

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-6-4] Strain Characterization of InAs Segment in Au-free InP/InAs Heterostructure Nanowires by Micro-Raman Measurement

G. Zhang¹, K. Suzuki², S. Nakagawa³, K. Tateno¹, T. Sogawa¹, H. Gotoh¹ (1.Basic Res. Labs., NTT Corp., 2.Tokyo Denki Univ., 3.Toyohashi Univ. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2014.P-6-4

▲