Electrically Active Defects in GeSnSi/Ge Junctions Formed at Low Temperature

N. Taoka; T. Asano; T. Yamaha; T. Terashima; S. Asaba; O. Nakatsuka; P. Zaumseil; G. Capellini; T. Schroeder; S. Zaima

doi:https://doi.org/10.7567/SSDM.2014.PS-1-2

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[PS-1-2] Electrically Active Defects in GeSnSi/Ge Junctions Formed at Low Temperature

N. Taoka^1,2、T. Asano²、T. Yamaha²、T. Terashima²、S. Asaba²、O. Nakatsuka²、P. Zaumseil¹、G. Capellini¹、T. Schroeder¹、S. Zaima² (1.IHP、2.Nagoya Univ. (Germany))

https://doi.org/10.7567/SSDM.2014.PS-1-2

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