[PS-1-3] Effect of Kr/O₂ Mixed ECR Plasma Oxidation on Electrical Properties of Al₂O₃/Ge Gate Stacks Fabricated by ALD

Y. Nagatomi¹, Y. Nagaoka¹, K. Yamamoto¹, D. Wang¹, H. Nakashima¹ (1.Kyushu Univ. (Japan))

https://doi.org/10.7567/SSDM.2014.PS-1-3