[PS-1-3] Effect of Kr/O₂ Mixed ECR Plasma Oxidation on Electrical Properties of Al₂O₃/Ge Gate Stacks Fabricated by ALD

Y. Nagatomi¹、Y. Nagaoka¹、K. Yamamoto¹、D. Wang¹、H. Nakashima¹ (1.Kyushu Univ. (Japan))

https://doi.org/10.7567/SSDM.2014.PS-1-3