[PS-14-12L] Generation and suppression of oxidation byproducts at 4H-SiC C-face / SiO2 interface characterized by infrared spectroscopy H. Hirai1、K. Kita1,2 (1.The Univ. of Tokyo、2.JST-PRESTO (Japan)) https://doi.org/10.7567/SSDM.2014.PS-14-12L