[PS-14-8] Switching characteristics of a 4H-SiC IGBT with interface defects up to the nonquasi-static regime

I. Pesic^1,2, D. Navarro², M. Fujinaga², Y. Furui², M. Miura-Mattausch¹ (1.Hiroshima Univ., 2.Silvaco Japan (Japan))

https://doi.org/10.7567/SSDM.2014.PS-14-8