[PS-14-8] Switching characteristics of a 4H-SiC IGBT with interface defects up to the nonquasi-static regime

I. Pesic^1,2、D. Navarro²、M. Fujinaga²、Y. Furui²、M. Miura-Mattausch¹ (1.Hiroshima Univ.、2.Silvaco Japan (Japan))

https://doi.org/10.7567/SSDM.2014.PS-14-8