Investigation of Low-Frequency Noise in High-k First/Metal Gate Last HfO<sub>2</sub> and ZrO<sub>2</sub> nMOSFETs

S.L. Wu; B.C. Wang; Y.Y. Lu; S.C. Tsai; J.F. Chen; S.J. Chang; S.P. Chang; C.H. Hsu; C.W. Yang; C.G. Chen; O. Cheng; P.C. Huang

doi:https://doi.org/10.7567/SSDM.2014.PS-3-10

[PS-3-10] Investigation of Low-Frequency Noise in High-k First/Metal Gate Last HfO₂ and ZrO₂ nMOSFETs

S.L. Wu¹、B.C. Wang²、Y.Y. Lu¹、S.C. Tsai²、J.F. Chen²、S.J. Chang^2,3、S.P. Chang^2,3、C.H. Hsu⁴、C.W. Yang⁴、C.G. Chen⁴、O. Cheng⁴、P.C. Huang^2,3 (1.Cheng Shiu Univ.、2.Inst. of Microelectronics and Department of Electrical Engineering, National Cheng Kung Univ.、3.Advanced Optoelectronic Tech. Center, National Cheng Kung Univ.、4.United Microelectronics Corp. (Taiwan))

https://doi.org/10.7567/SSDM.2014.PS-3-10

2014 International Conference on Solid State Devices and Materials

[PS-3-10] Investigation of Low-Frequency Noise in High-k First/Metal Gate Last HfO2 and ZrO2 nMOSFETs

[PS-3-10] Investigation of Low-Frequency Noise in High-k First/Metal Gate Last HfO₂ and ZrO₂ nMOSFETs