The Japan Society of Applied Physics

[PS-3-10] Investigation of Low-Frequency Noise in High-k First/Metal Gate Last HfO2 and ZrO2 nMOSFETs

S.L. Wu1, B.C. Wang2, Y.Y. Lu1, S.C. Tsai2, J.F. Chen2, S.J. Chang2,3, S.P. Chang2,3, C.H. Hsu4, C.W. Yang4, C.G. Chen4, O. Cheng4, P.C. Huang2,3 (1.Cheng Shiu Univ., 2.Inst. of Microelectronics and Department of Electrical Engineering, National Cheng Kung Univ., 3.Advanced Optoelectronic Tech. Center, National Cheng Kung Univ., 4.United Microelectronics Corp. (Taiwan))