[PS-3-10] Investigation of Low-Frequency Noise in High-k First/Metal Gate Last HfO₂ and ZrO₂ nMOSFETs

S.L. Wu¹, B.C. Wang², Y.Y. Lu¹, S.C. Tsai², J.F. Chen², S.J. Chang^2,3, S.P. Chang^2,3, C.H. Hsu⁴, C.W. Yang⁴, C.G. Chen⁴, O. Cheng⁴, P.C. Huang^2,3 (1.Cheng Shiu Univ., 2.Inst. of Microelectronics and Department of Electrical Engineering, National Cheng Kung Univ., 3.Advanced Optoelectronic Tech. Center, National Cheng Kung Univ., 4.United Microelectronics Corp. (Taiwan))

https://doi.org/10.7567/SSDM.2014.PS-3-10