[PS-3-6] Gate Voltage Dependent 1/f Noise Variance Model in n-Channel MOSFETs

Y. Arai¹、H. Aoki¹、F. Abe¹、S. Todoroki¹、R. Khatami¹、M. Kazumi¹、T. Totsuka¹、T. Wang¹、H. Kobayashi¹ (1.Gunma Univ. (Japan))

https://doi.org/10.7567/SSDM.2014.PS-3-6