Gate Voltage Dependent 1/f Noise Variance Model in n-Channel MOSFETs

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

Y. Arai¹, H. Aoki¹, F. Abe¹, S. Todoroki¹, R. Khatami¹, M. Kazumi¹, T. Totsuka¹, T. Wang¹, H. Kobayashi¹ (1.Gunma Univ. (Japan))