[PS-3-8] Dopant Drive-in Path Analysis in Poly-silicon Filled in Trench type 3D-MOSFET using Atom Probe Tomography

K. Inoue¹, H. Takamizawa¹, Y. Shimizu¹, B. Han¹, Y. Nagai¹, F. Yano², Y. Kunimune³, M. Inoue⁴, A. Nishida⁴ (1.Tohoku Univ., 2.Tokyo City Univ., 3.Renesas Semiconductor Manufacturing Co., Ltd., 4.Renesas Electronics Corp. (Japan))

https://doi.org/10.7567/SSDM.2014.PS-3-8