Dopant Drive-in Path Analysis in Poly-silicon Filled in Trench type 3D-MOSFET using Atom Probe Tomography

K. Inoue; H. Takamizawa; Y. Shimizu; B. Han; Y. Nagai; F. Yano; Y. Kunimune; M. Inoue; A. Nishida

doi:https://doi.org/10.7567/SSDM.2014.PS-3-8

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[PS-3-8] Dopant Drive-in Path Analysis in Poly-silicon Filled in Trench type 3D-MOSFET using Atom Probe Tomography

K. Inoue¹、H. Takamizawa¹、Y. Shimizu¹、B. Han¹、Y. Nagai¹、F. Yano²、Y. Kunimune³、M. Inoue⁴、A. Nishida⁴ (1.Tohoku Univ.、2.Tokyo City Univ.、3.Renesas Semiconductor Manufacturing Co., Ltd.、4.Renesas Electronics Corp. (Japan))

https://doi.org/10.7567/SSDM.2014.PS-3-8

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