[PS-4-1] The Impact of Inserted Ta Ultra-thin Layer on the Resistive Switching Voltage in Ir/Ti/Ta/HfO₂/TiN/Ti/SiO₂/Si Devices

S. Asanuma¹, H. Shima¹, M. Yamazaki¹, N. Hata¹, H. Akinaga¹ (1.AIST (Japan))

https://doi.org/10.7567/SSDM.2014.PS-4-1