[PS-4-2] A Possible Bipolar HfO_x Resistive Memory Device with Self-Rectification - Observations from STM Study

Y. Zhou¹、K.S. Yew¹、D.S. Ang¹ (1.Nanyang Tech. Univ. (Singapore))

https://doi.org/10.7567/SSDM.2014.PS-4-2