[PS-4-5] La/Al-doped ZrO₂ Thin-Film Resistive Random Access Memory Devices by Sol-gel Method for Transparent Solid-State Circuit Systems

Y.R. Wang¹, B. Chen¹, B. Gao¹, L.F. Liu¹, J.F. Kang¹ (1.Peking Univ. (China))

https://doi.org/10.7567/SSDM.2014.PS-4-5