[PS-4-5] La/Al-doped ZrO₂ Thin-Film Resistive Random Access Memory Devices by Sol-gel Method for Transparent Solid-State Circuit Systems

Y.R. Wang¹、B. Chen¹、B. Gao¹、L.F. Liu¹、J.F. Kang¹ (1.Peking Univ. (China))

https://doi.org/10.7567/SSDM.2014.PS-4-5