Reduction in Mobility Difference between C-Axis-Aligned Crystalline IGZO-FET and Si-FET by Miniaturization

S. Matsuda; Y. Yamane; Y. Okazaki; T. Ishizu; Y. Kobayashi; H. Suzawa; A. Isobe; S. Yamazaki

doi:https://doi.org/10.7567/SSDM.2014.PS-6-10

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[PS-6-10] Reduction in Mobility Difference between C-Axis-Aligned Crystalline IGZO-FET and Si-FET by Miniaturization

S. Matsuda¹, Y. Yamane¹, Y. Okazaki¹, T. Ishizu¹, Y. Kobayashi¹, H. Suzawa¹, A. Isobe¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2014.PS-6-10

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