[PS-6-10] Reduction in Mobility Difference between C-Axis-Aligned Crystalline IGZO-FET and Si-FET by Miniaturization

S. Matsuda¹、Y. Yamane¹、Y. Okazaki¹、T. Ishizu¹、Y. Kobayashi¹、H. Suzawa¹、A. Isobe¹、S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2014.PS-6-10