Ideal transport characteristics of Schottky contacts on AlGaN/GaN structure grown on free-standing SI-GaN substrate

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

T. Nanjo¹, K. Kurahashi¹, M. Tanaka¹, A. Kiyoi¹, A. Imai¹, M. Suita¹, Y. Suzuki¹, T. Tanaka¹, E. Yagyu¹ (1.Mitsubishi Electric Corp. (Japan))