[PS-6-16L] Ideal transport characteristics of Schottky contacts on AlGaN/GaN structure grown on free-standing SI-GaN substrate

T. Nanjo¹、K. Kurahashi¹、M. Tanaka¹、A. Kiyoi¹、A. Imai¹、M. Suita¹、Y. Suzuki¹、T. Tanaka¹、E. Yagyu¹ (1.Mitsubishi Electric Corp. (Japan))

https://doi.org/10.7567/SSDM.2014.PS-6-16L