Fluorinated Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Engineering on GaSb MOS Devices

Z.H. Zeng; B. Sun; H.D. Chang; W. Zhao; X. Yang; S.K. Wang; X. Zhang; Y.P. Cui; H.G. Liu

doi:https://doi.org/10.7567/SSDM.2014.PS-6-2

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[PS-6-2] Fluorinated Al₂O₃ Gate Dielectric Engineering on GaSb MOS Devices

Z.H. Zeng^1,2、B. Sun¹、H.D. Chang¹、W. Zhao¹、X. Yang^1,2、S.K. Wang¹、X. Zhang²、Y.P. Cui²、H.G. Liu¹ (1.Inst. of Microelectronics of Chinese Academy of Sciences、2.Southeast Univ. (China))

https://doi.org/10.7567/SSDM.2014.PS-6-2

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2014 International Conference on Solid State Devices and Materials

[PS-6-2] Fluorinated Al2O3 Gate Dielectric Engineering on GaSb MOS Devices

[PS-6-2] Fluorinated Al₂O₃ Gate Dielectric Engineering on GaSb MOS Devices