High-frequency Performance In0.49Ga0.51P/In0.4Ga0.6As MOSFET

J.H. Zhou; H.D. Chang; G.M. Liu; H.O. Li; H.G. Liu

doi:https://doi.org/10.7567/SSDM.2014.PS-6-5

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[PS-6-5] High-frequency Performance In_0.49Ga_0.51P/In_0.4Ga_0.6As MOSFET

J.H. Zhou^1,2, H.D. Chang², G.M. Liu², H.O. Li¹, H.G. Liu² (1.Guangxi Experiment Center of Info. Sci. , Guilin Univ. of Electronic Tech., 2.Microwave Device and IC Department, Inst. of Microelectronics of Chinese Academy of Sciences (China))

https://doi.org/10.7567/SSDM.2014.PS-6-5

▲

2014 International Conference on Solid State Devices and Materials

[PS-6-5] High-frequency Performance In0.49Ga0.51P/In0.4Ga0.6As MOSFET

[PS-6-5] High-frequency Performance In_0.49Ga_0.51P/In_0.4Ga_0.6As MOSFET