[PS-6-5] High-frequency Performance In_0.49Ga_0.51P/In_0.4Ga_0.6As MOSFET

J.H. Zhou^1,2、H.D. Chang²、G.M. Liu²、H.O. Li¹、H.G. Liu² (1.Guangxi Experiment Center of Info. Sci. , Guilin Univ. of Electronic Tech.、2.Microwave Device and IC Department, Inst. of Microelectronics of Chinese Academy of Sciences (China))

https://doi.org/10.7567/SSDM.2014.PS-6-5