[PS-6-9] Electrical Characteristic Simulation of Novel AlGaN/GaN Vertical HEMT with Multi-Aperture and SiO₂ Current Blocking Layer

N.M. Shrestha¹、Y.Y. Wang¹、Y. Li¹、E.Y. Chang¹ (1.NCTU (Taiwan))

https://doi.org/10.7567/SSDM.2014.PS-6-9